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传感器用镓掺杂氧化锌纳米盘/纳米花状结构催化剂的制备及表面表征
引用本文:R. Jothi Ramalingam,T. Radika,Hamad A. Al-Lohedan. 传感器用镓掺杂氧化锌纳米盘/纳米花状结构催化剂的制备及表面表征[J]. 催化学报, 2016, 0(8): 1235-1241. DOI: 10.1016/S1872-2067(16)62464-6
作者姓名:R. Jothi Ramalingam  T. Radika  Hamad A. Al-Lohedan
作者单位:1. 沙特阿拉伯国王大学理学院化学系,表面活性剂研究中心,利雅得11451,沙特阿拉伯; 蔚山大学工程学院,韩国;2. 印度电子技术材料研究中心,特里苏尔,喀拉拉邦,印度;3. 沙特阿拉伯国王大学理学院化学系,表面活性剂研究中心,利雅得11451,沙特阿拉伯
摘    要:采用简便的旋涂过程和一步水热法在压电基片上制备了Ga掺杂的ZnO纳米薄膜(GZO)。在水热处理过程中,通过添加不同的聚合物可形成纳米盘和纳米花状形貌的薄膜。采用场发射扫描电镜(Fe-SEM)、X射线衍射(XRD)和Raman光谱表征了样品的形貌、微结构和组成。 XRD和FE-SEM结果证明,在AlN/Si压电基片上形成的纳米盘、纳米棒和纳米花状GZO均为纤维锌矿相。采用浸渍法进一步在所制GZO样品上固定了绿色的荧光蛋白质(GFP)。运用原子力显微镜和荧光光谱分析了GFP与GZO表面结合的性质,考察了其用于传感器和生物成像技术的可行性。痕量GFP的固定使该材料产生荧光响应,表明其用于紫外光传感器时具有较好活性。

关 键 词:半导体  薄膜  溶胶凝胶生长  原子力显微镜  导电性  表面性质

Preparation and surface characterization of nanodisk/nanoflower-structured gallium-doped zinc oxide as a catalyst for sensor applications
R. Jothi Ramalingam,T. Radika,Hamad A. Al-Lohedan. Preparation and surface characterization of nanodisk/nanoflower-structured gallium-doped zinc oxide as a catalyst for sensor applications[J]. Chinese Journal of Catalysis, 2016, 0(8): 1235-1241. DOI: 10.1016/S1872-2067(16)62464-6
Authors:R. Jothi Ramalingam  T. Radika  Hamad A. Al-Lohedan
Abstract:Nanostructured gallium‐doped zinc oxide (GZO) thin films were fabricated on piezoelectric sub‐strates. The GZO thin films with nanodisk/nanoflower morphologies were prepared by a simple spin‐coating process followed by one‐step hydrothermal treatment. Addition of polymer during hydrothermal treatment resulted in nanodisk and nanoflower morphologies. The morphology, microstructure and chemical composition of thin films prepared under different conditions were examined by field‐emission scanning electron microscopy (FE‐SEM), X‐ray diffraction (XRD) and Raman spectroscopy. The XRD and FE‐SEM investigations confirmed that the GZO nanodisks, na‐norods and nanoflowers formed on the AlN/Si substrates were all wurtzite phase. Green fluorescent protein (GFP) was immobilized on the as‐synthesized GZO nanostructured materials by a dipping process. Atomic force microscopy (AFM) and fluorescence spectroscopy measurements were con‐ducted to confirm the surface binding nature of GFP on the GZO nanostructures to determine their suitability for use in sensor applications and bioimaging techniques. Trace‐level addition of GFP to the GZO nanostructures resulted in a fluorescence response, revealing good activity for ultraviolet light sensor applications.
Keywords:Semiconductors  Thin films  Sol-gel growth  Atomic force microscopy  Electrical conductivity  Surface property
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