| Institution: | 1. Department of Electrical Engineering and Information Technology, University Federico II, via Claudio 21, 80125 Naples, Italy;2. SATIE, CNAM, CNRS, ENS Cachan, 61 Av. du Président Wilson, 94234 Cachan, France;3. Université Paris-Est Créteil Val de Marne, 61 avenue du Général de Gaulle, 94010 Créteil Cedex, France;4. Freescale Semiconductor, Avenue du Général Eisenhower, 31023 Toulouse, France;1. Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, Cerdanyola del Valles, Spain;2. Departamento de Electricidad y Electrónica, Universidad de Valladolid, Valladolid, Spain;3. Department of Chemistry, University of Helsinki, Helsinki, Finland;1. Engineering Product Development Pillar, Singapore University of Technology and Design, Singapore 138 682, Singapore;2. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA;1. STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles Cedex, France;2. Laboratory of Computer Sciences, Paris 6 (LIP6), Systems On Chips Department, UPMC University, 4 place Jussieu, 75252 Paris Cedex 05, France;1. Le2i, UMR CNRS 6306, University of Burgundy, 9 Avenue Alain Savary, 21000 Dijon, France;2. Centre National d’Etudes Spatiales (CNES), 18 Avenue Edouard Belin, 31401 Toulouse, France;1. IMS-Bordeaux, Université de Bordeaux – UMR 5218, 351 cours de la Libération, 33405 Talence, France;2. Information Technology Laboratory, Gottfried Wilhelm Leibniz Universität Hannover, Hannover, Germany |
