Design and analysis of noise margin,write ability and read stability of organic and hybrid 6-T SRAM cell |
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| Institution: | 1. Department of Polymer and Process Engineering, Indian Institute of Technology, Roorkee 247667, India;2. Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee 247667, India;3. Department of Electronics and Communication Engineering, Graphic Era University, Dehradun 248001, India;1. Department of Electrical and Computer Engineering, Indiana University-Purdue University Indianapolis (IUPUI), Indianapolis, IN46202, USA;2. Department of Electronic Systems, Norwegian University of Science and Technology (NTNU), Trondheim, NO-7491, Norway;3. CNC, School of Engineering and Technology, Indiana University-Purdue University Indianapolis (IUPUI), Indianapolis, IN46202, USA;4. Integrated Nanosystems Development Institute, Indiana University-Purdue University Indianapolis (IUPUI), Indianapolis, IN46202, USA;5. Richard G. Lugar Center for Renewable Energy, Indiana University-Purdue University Indianapolis (IUPUI), Indianapolis, IN46202, USA;1. College of Opt-electrical Science and Engineering, National University of Defensive Technology, Changsha 410073, China;2. State Key Laboratory of High Performance Computing, National University of Defensive Technology, Changsha 410073, China;1. School of Electronic and Optical Engineering, Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China;2. Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China;3. Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials(SICAM), Nanjing Tech University(Nanjing Tech), 30 South Puzhu Road, Nanjing 211816, China;4. Shandong Provincial Key Laboratory of Optical Communication Science and Technology, School of Physical Science and Information Technology, Liaocheng University, Shandong 252059, China;1. Department of Micro-Nano Electronics, Shanghai Jiao Tong University, Shanghai, China;2. Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA |
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| Abstract: | This paper analyzes SRAM cell designs based on organic and inorganic thin film transistors (TFTs). The performance in terms of static noise margin (SNM), read stability and write ability for all-p organic (Pentacene–Pentacene), organic complementary (Pentacene–C60) and hybrid complementary (Pentacene–ZnO) configurations of SRAM cell is evaluated using benchmarked industry standard Atlas 2-D numerical device simulator. Moreover, the cell behaviour is analyzed at different cell and pull-up ratios. The electrical characteristics and performance parameters of individual TFT used in SRAM cell is verified with reported experimental results. Furthermore, the analytical result for SNM of all-p organic SRAM cell is validated with respect to the simulated result. Besides this, the cell and pull-up ratios of the hybrid and organic SRAM cells are optimized for achieving best performance of read and write operations and thereafter, the results are verified analytically also. The SNM of hybrid cell is almost two times higher than the all-p SRAM, whereas this improvement is just 18% in comparison to the organic memory cell. On the other hand, the organic complementary SRAM cell shows an improvement of 26% and 22% for the read stability in comparison to the all-p organic and hybrid SRAM cells, respectively. Contrastingly, this organic cell demonstrates a reduction of 16% in the SNM and an increment of 76% in write access time in comparison to the hybrid cell. To achieve an overall improved performance, the organic complementary SRAM cell is designed such that the access transistors are pentacene based p-type instead of often used n-type transistor. Favorably, this organic SRAM design shows reasonably lower write access time in comparison to the cell with n-type access OTFTs. Moreover, this cell shows adequate SNM and read stability that too at substantially lower width of p-type access OTFTs. |
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| Keywords: | Hybrid SRAM Noise margin Organic complementary SRAM Read stability Write access time |
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