On the dependence of surface undulation on film thickness |
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Institution: | 1. School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47906, USA;2. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA;1. School of Science, Henan Institute of Engineering, Zhengzhou 451191, China;2. School of Science, Jiaozuo Teacher’s College, Jiaozuo 454001, China |
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Abstract: | This paper investigates the dependence of surface undulation on a film thickness considerably greater than the critical value of a thin film system. It considers that surface tension and residual stress are the main cause of surface undulation. The study found that there is a critical undulation wavelength that minimizes the free energy of a thin film system, that this critical wavelength depends on the film thickness, and the effect of undulation amplitude is insignificant. The research also found that the surface undulation has a negligible influence on the residual stresses in the thin film system. |
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Keywords: | A Thin film B Epitaxial growth D Surface properties |
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