Thermoelectric properties of Ge-doped Bi85Sb15 alloys at low temperatures |
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| Institution: | 1. Key Laboratory of Cryogenics, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China;2. Graduate University of Chinese Academy of Sciences, Beijing 100049, P.R. China;3. Department of Physics, Zunyi Normal College, Zunyi 563002, P.R. China;1. Ru?er Bo?kovi? Institute, Division of Materials Physics, Bijeni?ka cesta 54, P.O. Box 180, HR-10002 Zagreb, Croatia;2. Jo?ef Stefan Institute, Department for Nanostructured Materials, Jamova cesta 39, SI-1000 Ljubljana, Slovenia;3. University of Zagreb, Faculty of Science, Department of Physics, Bijeni?ka cesta 32, P.O. Box 331, HR-10002, Zagreb, Croatia;4. University of Zagreb, Faculty of Chemical Engineering and Technology, Maruli?ev trg 19, HR-10000 Zagreb, Croatia;1. Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla, Colombia;2. GEMA - Grupo de Estudio de Materiales, Departamento de Física, Universidad Nacional de Colombia, Bogotá, Colombia;1. Department of Physics, ML Sukhadia University, Udaipur 313001, India;2. Department of Physics, College of Science, University of Tikrit, Tikrit, Iraq;3. Department of Physics, College of Education, University of Tikrit, Tikrit, Iraq;4. Department of Physics, Manipal University Jaipur, Jaipur 303007, India;5. Department of Pure and Applied Physics, University of Kota, Kota 324010, India;1. Faculty of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland;2. Faculty of Biological Sciences, University of Zielona Góra, Szafrana 1, 65-516 Zielona Góra, Poland;3. Institute of Molecular Physics, Polish Academy of Science, Smoluchowskiego 17, 60-179, Poznań, Poland;4. Joint Institute for Nuclear Research, 141 980 Dubna, Russian Federation |
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| Abstract: | Bulk polycrystalline Bi85Sb15?xGex (x=0, 0.5, 1, 1.5, 2) composites were prepared by mechanical alloying followed by pressureless sintering. The thermoelectric properties were studied in the temperature range of 77–300 K. The results indicate that increasing the Ge concentration causes the Seebeck coefficient to change sign from negative to positive. Moreover, it is found that the maximum value of the Seebeck coefficient can be precisely controlled with the Ge concentration. The maximum dimensionless figure of merit reaches 0.07 at 140 K. These results suggest that the preparation of p-type Bi–Sb alloys is possible by using the Ge-doping approach. |
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| Keywords: | A Semiconductor D Electrical properties D Thermal conductivity D Transport properties |
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