| Institution: | 1. Institute of Microelectronics, Tsinghua University, 100084 Beijing, China;2. IMEC, B-3001 Leuven, Belgium;1. STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles Cedex, France;2. Laboratory of Computer Sciences, Paris 6 (LIP6), Systems On Chips Department, UPMC University, 4 place Jussieu, 75252 Paris Cedex 05, France;1. Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, Cerdanyola del Valles, Spain;2. Departamento de Electricidad y Electrónica, Universidad de Valladolid, Valladolid, Spain;3. Department of Chemistry, University of Helsinki, Helsinki, Finland;1. Department of Electric and Information Engineering (DIEI), University of Cassino and Southern Lazio, Via G. Di Biasio, 43, 03043 Cassino, FR, Italy;2. Fairchild Semiconductor GmbH, 85609 Aschheim/Munich, Germany;1. Freescale Semiconducteurs France SAS, Toulouse Product Analysis Lab, 134 avenue du Général Eisenhower, B.P. 72329, 31023 Toulouse Cedex, France;2. Freescale Semiconductor Inc, 1300 North Alma Road, 85224 Chandler, AZ, USA;1. School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea;2. Research & Development Division, SK Hynix Semiconductor Inc, Icheon, Republic of Korea |
