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Localization of temperature sensitive areas on analog circuits |
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| Institution: | 1. Infineon Technologies AG, Wernerwerkstraße 2, 93049 Regensburg, Germany;2. NaMLab gGmbH, Nöthnitzer Str. 64, 01187 Dresden, Germany;3. TU Dresden, Institute of Semiconductors and Microsystems, Chair of Nanoelectronic Materials, Nöthnitzer Str. 64, 01187 Dresden, Germany;1. University of Valencia, Spain;2. University of L׳Aquila, Italy;3. Institut de Microelectrònica de Barcelona–Centre Nacional de Microelectrònica (IMB-CNM), CSIC, Spain;4. Instituto de Microelectrónica de Sevilla–Centro Nacional de Microelectrónica (IMS-CNM), Spain;5. Ben-Gurion University of the Negev, Israel;6. INESC-Microsistemas e Nanotecnologias INESC-MN/IN and Physics Department, Instituto Superior Técnico (IST), Portugal;7. INESC Microsistemas e Nanotecnologias, Portugal;1. Department of Electronic Engineering, City University of Hong Kong, Hong Kong SAR;2. Center for Neural Engineering, Department of Biomedical Engineering, University of Southern California, Los Angeles, CA 90089, USA |
| Abstract: | We introduce a novel easy to apply method to detect critical temperature sensitive areas on analog circuits. Our method is based on heat diffusion on a silicon micro-chip: the corners of a temperature sensitive micro-chip are heated up directly by ESD diodes or infrared laser light. This heat stimulus at the corners results in an inhomogeneous temperature distribution. Thus, the temperature is a function in time and space. The elapsed time to change the chip status from “fail” to “pass” as a reaction to the heat stimulus correlates with the distance to the heat source. This correlation is extracted from COMSOL simulations and experimental results. A numerical program based on that correlation succeeded in localization of the temperature sensitive chip module.Micro-chips affected by corner MOSFETs in the subthreshold regime are used to demonstrate our method. |
| Keywords: | Failure analysis Heat diffusion Corner device Analog circuits |
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