Signal noise perturbation on automotive mixed-mode semiconductor device generated by graded substrate defect |
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| Affiliation: | 1. Freescale Semiconducteurs France SAS, Toulouse Product Analysis Lab, 134 avenue du Général Eisenhower, B.P. 72329, 31023 Toulouse Cedex, France;2. Freescale Semiconductor Inc, 1300 North Alma Road, 85224 Chandler, AZ, USA;1. SAGE-ENISo, National Engineering School of Sousse, 4023 University of Sousse, Tunisia;2. Al Leith Engineering College, Umm Al-Qura University, Saudi Arabia;3. ISIM, University of Gabes, 6072 Gabes, Tunisia;4. ESTACA Research Center, 92532 Levallois Perret, Paris, France;5. GPM-UMR CNRS 6634, University of Rouen, 76801 Saint Etienne du Rouvray, France;1. Engineering Product Development Pillar, Singapore University of Technology and Design, Singapore 138 682, Singapore;2. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA;1. IMS-Bordeaux, Université de Bordeaux – UMR 5218, 351 cours de la Libération, 33405 Talence, France;2. Information Technology Laboratory, Gottfried Wilhelm Leibniz Universität Hannover, Hannover, Germany;1. University of Vienna, Physics of Nanostructured Materials, Vienna, Austria;2. Materials Center Leoben Forschung GmbH, Leoben, Austria;3. Vienna University of Technology, Faculty of Technical Chemistry, Vienna, Austria;1. Corporate Reliability Department, Infineon Technologies AG, D-85579 Munich, Germany;2. Technologies Development Department, Infineon Technologies Dresden GmbH, 01099 Dresden, Germany |
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| Abstract: | The semiconductor technologies evolution allows greatly reducing noise impact on products and many structures have been created to reduce its effect. However, this paper presents the apparition of a noise issue during the production of a mixed-mode device dedicated to automotive applications. The research investigations concerned the fact that failure was not detected at test level but at customer level; therefore, it was determinant to understand the root cause of this failure mode to drive corrective actions in order to secure customer. The challenge was to analyse noise in Failure Analysis (FA) without fault spatial localization results. Indeed, Light Emission Microscopy (EMMI) and Thermal Laser Stimulation (ex: Soft Defect Localization – SDL) were unable to provide any defective area in the product. The lack of failing device identification led us to combine electrical and design analyses in order to define hypothesis on the failure origin. It was then possible to drive physical investigations through different approaches, using physical cross-section, Secondary Ion Mass Spectrometry (SIMS) and Scanning Capacitance Microscopy (SCM) techniques. Finally, the obtained complementary results will be discussed and an explanation of the failure mechanism will be presented as the root cause issue, allowing defining the defective step in production process. |
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| Keywords: | Mixed-mode device Failure analysis AC noise SCM SIMS Wafer substrate defect |
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