Thin-film formation of Si clathrates on Si wafers |
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| Institution: | 1. Department of Electrical, Electronic and Computer Engineering, Faculty of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan;2. Environmental and Renewal Energy Systems Division, Graduate School of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan;3. Department of Chemistry and Biomolecular Science, Faculty of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan;1. Dipartimento di Chimica and NIS, Università di Torino, V. Giuria 7, 10125 Torino, Italy;2. INRIM, Strada delle Cacce 91, 10135 Torino, Italy;1. Department of Physics, Colorado School of Mines, Golden, CO, USA;2. Department of Physics, University of South Florida, Tampa, FL, USA;3. Department of Chemical and Biological Engineering, Colorado School of Mines, Golden, CO, USA |
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| Abstract: | In this study, we prepared Si clathrate films (Na8Si46 and NaxSi136) using a single-crystalline Si substrate. Highly oriented film growth of Zintl-phase sodium silicide, which is a precursor of Si clathrate, was achieved by exposing Na vapour to Si substrates under an Ar atmosphere. Subsequent heat treatment of the NaSi film at 400 °C (3 h) under vacuum (<10?2 Pa) resulted in a film of Si clathrates having a thickness of several micrometres. Furthermore, this technique enabled the selective growth of Na8Si46 and NaxSi136 using the appropriate crystalline orientation of Si substrates. |
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| Keywords: | Silicon clathrate Sodium silicide Thermal decomposition Thin film |
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