Effect of Bi-doping and Mg-excess on the thermoelectric properties of Mg2Si materials |
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| Institution: | 1. Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea;2. Advanced Materials Research Team, Central Advanced Research and Engineering Institute, Hyundai Motor Company, Uiwang 437-718, South Korea;3. Department of Energy Science, Sungkyunkwan University, Suwon 440-746, South Korea;4. Department of Nano Applied Engineering, Kangwon National University, Chuncheon 200-701, South Korea;1. Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea;2. Advanced Materials Research Team, Central Advanced Research and Engineering Institute, Hyundai Motor Company, Uiwang 16082, South Korea;3. Department of Nano Applied Engineering, Kangwon National University, Chuncheon 24341, South Korea |
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| Abstract: | In this work, Bi-doped magnesium silicide compounds were prepared by applying a combination of both, short-time ball milling and heating treatment. The effect of Mg excess was also studied, aiming towards further improvement in thermoelectric properties. The structural modifications of all materials were followed by Powder X-ray diffraction and Scanning Electron Microscopy. Highly dense pellets of Mg2Si1−xBix (0≤x≤0.035) and Mg2+δSi0.975Bi0.025 (δ=0.04, 0.06 and 0.12) were fabricated via hot pressing and studied in terms of Seebeck coefficient, electrical and thermal conductivities and free carrier concentration. Their thermoelectric performance, at high temperature range, is presented and the maximum value of the dimensionless-figure-of-merit (ZT) is found to be 0.68 at 810 K, for Mg2Si0.97Bi0.03. |
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| Keywords: | A Intermetallic compounds D Transport properties D Thermal conductivity |
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