Influence of temperature variation on field effect transistor properties using a solution-processed liquid crystalline semiconductor,C8BTBT |
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Authors: | Hirosato Monobe Masaomi Kimoto Yo Shimizu |
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Affiliation: | 1. Research Institute for Ubiquitous Energy Devices, National Institute of Advanced Industrial Science and Technology (AIST), Midorigaoka, Ikeda, Osaka, Japan;2. Okuno Chemical Industries Co., Ltd., Jyoutou-ku, Osaka, Japan |
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Abstract: | In this study, we used a LC semiconductor, C8BTBT, solution (e.g. 0.1 wt % in heptane) for forming an organic semiconductor layer by casting method, and fabricated bottom-gate/bottom-contact type FETs. The FETs mobility was determined 0.17 cm2 V?1 s?1 which was comparable to that determined by time-of-flight technique in a sandwich type cell at room temperature. We have investigated the surface morphology and the influence of temperature variation on FET properties. The LC FET mobility was kept below 60°C and drastically decreased after heat stress above 100°C irreversibly. |
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Keywords: | Liquid crystals liquid crystalline semiconductor field effect transistor temperature variation printed electronics |
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