Study of non-radiative silicon deexcitation in an oxygen atmosphere using the differential measurement of the excited state lifetimes |
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Authors: | J. Azencot R. Goutte |
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Affiliation: | (1) Laboratoire d'Optique Corpusculaire et d'Ultrasons, Institut National des Sciences Appliquées de Lyon, F-69621 Villeurbanne Cedex, France |
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Abstract: | Having developed a new method of differential lifetime measurement using atomic ionoluminescence as an excitation process, we applied this method to a monocrystaline silicon sample in an oxygen atmosphere of variable pressure. We found decreased values of the experimental lifetimes concerning levels 4s 3 P 0 and 4s 1 P 0, which are more marked when the oxygen pressure increases. This tends then towards a saturation of the observed phenomenon. We propose, in agreement with other authors, an explanation which is based on the existence of non-radiative deexcitations. We present also a mathematical model for calculating this transition effect on the lifetime measurements. We consider that it is possible to take advantage of this experimental lifetime variation to determine a parameter of the model which characterises the non-radiative deexcitations. This measuring method appears to be a simple and original procedure for the study of certain nonradiative transitions. |
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Keywords: | 82.65 79.20 34 |
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