(1) Prokhorov General Physics Institute, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991, Russia;(2) State Research Center, Troitsk Institute for Innovation and Fusion Research, Troitsk, Moscow oblast, 142190, Russia
Abstract:
The problem of current-induced motion of a solitary domain wall in a free layer of the spin-valve structure is considered; the current flows perpendicularly to the structure layers. The action of the longitudinal and transverse components of the nonequilibrium polarization of the carriers injected into the free layer on the magnetization is analyzed.