| 非晶Si和非晶Si基合金半导体的g因子计算 |
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| 引用本文： | 于工,陈光华,苏玉成,张仿清. 非晶Si和非晶Si基合金半导体的g因子计算[J]. 物理学报, 1990, 39(9): 1441-1445 |
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| 作者姓名： | 于工 陈光华 苏玉成 张仿清 |
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| 作者单位： | 兰州大学物理系电子材料研究所,兰州730001 |
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| 摘 要： | 本文采用改进的CNDO/2(Semi Empirical Hartree-Focu of Complete Neglect of Diffe-rential Overlap)分子轨道方法计算了非晶Si和非晶Si基合金半导体的顺磁共振朗德劈裂因数(g值),讨论了晶格弛豫对g值的影响。计算结果与实验符合。关键词：
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| 关 键 词： | 非晶态 硅 半导体 硅基合金 g因子 |
| 收稿时间： | 1989-11-24 |
CALCULATION FOR g-VALUES OF THE AMORPHOUS Si AND AMORPHOUS Si-BASED ALLOY SEMICONDUCTORS |
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| YU GONG,CHEN GUANG-HUA,SU YU-CHENG and ZHANG FANG-QING. CALCULATION FOR g-VALUES OF THE AMORPHOUS Si AND AMORPHOUS Si-BASED ALLOY SEMICONDUCTORS[J]. Acta Physica Sinica, 1990, 39(9): 1441-1445 |
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| Authors: | YU GONG CHEN GUANG-HUA SU YU-CHENG ZHANG FANG-QING |
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| Abstract: | In this paper, the g-values of the ESR signals in amorphous Si and Si-based alloys have been calculated by using the improved CNDO/2 molecular orbital method. The effects of the structural relaxation on the g-valucs have been also discussed. The calculated results are in accord with the experiments. |
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