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氢氟酸和PSG牺牲层腐蚀的TDC模型
引用本文:吴昌聚,王昊,金仲和,马慧莲,王跃林.氢氟酸和PSG牺牲层腐蚀的TDC模型[J].半导体学报,2008,29(6).
作者姓名:吴昌聚  王昊  金仲和  马慧莲  王跃林
作者单位:浙江大学信息与电子工程系,杭州,310027
基金项目:国家重点基础研究发展计划(973计划)
摘    要:对不同结构,即直沟道结构、冒泡结构和组合沟道结构的氢氟酸牺牲层腐蚀进行了研究.以往的牺牲层腐蚀模型和实验结果不能很好地吻合.以往的模型和实验结果的误差随着腐蚀时间的增加而增大.本文提出了一个修正模型,在修正模型中:HF的扩散系数是浓度和温度的函数;腐蚀速率常数是温度的函数;此外还考虑了腐蚀产物对腐蚀过程的影响.对于组合沟道结构,对腐蚀前端形状的描述采用了一个新的数学模型.实验结果和以往的模型以及修正模型进行了对比,结果表明修正模型能够和实验结果吻合得很好.

关 键 词:扩散系数  腐蚀速率  牺牲层  TDC模型

TDC Model for PSG Sacrificial Layer Etching with Hydrofluoric Acid
Wu Changju,Wang Hao,Jin Zhonghe,Ma Huilian,Wang Yuelin.TDC Model for PSG Sacrificial Layer Etching with Hydrofluoric Acid[J].Chinese Journal of Semiconductors,2008,29(6).
Authors:Wu Changju  Wang Hao  Jin Zhonghe  Ma Huilian  Wang Yuelin
Abstract:HF etching of sacrificial layers with different structures, namely channel, bubble, and joint-channel, is studied.The existing model cannot fit the experimental data well. The error of etching rate between the existing model and the ex-perimental data increases with etching time. A modified model considering the diffusion coefficient as a function of HF concentration and temperature is proposed. The etching rate coefficient as a function of temperature and the effect of re-action production are also considered in the modified model. For the joint-channel structure, a new mathematical model for the etching profile is also adopted. Experimental data obtained with channel, bubble, and joint-channel structures are com-pared with the modified modet and the previous model. The results show that the modified model matches the experiments well.
Keywords:diffusion coefficient  etching rate  sacrificial oxide  TDC model
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