掺Sb的ZnO单晶的缺陷和性质研究

采用化学气相传输法生长了掺Sb的ZnO体单晶,生长温度为950℃.与非掺ZnO单品相比,掺Sb后ZnO单晶仍为n型,其自由电子浓度明显升高.x射线光电子能谱(XPS)测量结果表明.掺人的Sb在ZnO单晶中可能占据了Zn位,或处于间隙化置,形成了施主.利用光致发光谱(PL)测量发现掺Sb后ZnO单晶发出蓝光,该蓝色荧光与浅施主有关.这些结果表明在高温生长条件下,掺Sb后ZnO单晶中产生了高浓度的施主缺陷,因而难以获得P型材料.

Defects and Properties of Antimony-Doped ZnO Single Crystal

Sb-doped ZnO single crystal has been grown at 950℃ by the chemical vapor transport method.Compared to undoped ZnO,the Sb-doped ZnO single crystal is still n-type with an apparent increase of free electron concentration.X-ray photoelectron spectroscopy (XPS) measurement results suggest a possible occupation of the Zn site of the doped Sb in the ZnO single crystal,resulting in the formation of a donor.Blue emission is observed from the PL spectrum of the Sb doped ZnO single crystal,which is related with a shallow donor defect in ZnO.The results indicate that a high concentration of donor defects forms in ZnO after Sb doping at high temperature,making it difficult to obtain p-type material.