| PDP驱动芯片中高压LDMOS建模 |
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| 引用本文： | 李海松,孙伟锋,易扬波,时龙兴. PDP驱动芯片中高压LDMOS建模[J]. 半导体学报, 2008, 29(11): 2110-2114 |
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| 作者姓名： | 李海松 孙伟锋 易扬波 时龙兴 |
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| 作者单位： | 东南大学国家专用集成电路系统工程技术研究中心,南京,210096 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 建立了PDP驱动芯片用高压LDMOS的SPICE子电路模型,该模型集成了LDMoS固有特性:准饱和特性、电压控漂移区电阻、自热效应、密勒电容等.与其他物理模型和子电路模型比较,该模型不但能提供准确的模拟结果,而且建模简单快捷,另外该模型可较容易地嵌入SPICE模拟软件中.模型的实际应用结果显示:模拟与实测结果误差在5%以内.
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| 关 键 词： | 模型 LDMOS子电路 PDP驱动芯片 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2008-07-20 |
Modeling of High-Voltage LDMOS for PDP Driver ICs |
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| Li Haisong, Sun Weifeng, Yi Yangbo, Shi Longxing. Modeling of High-Voltage LDMOS for PDP Driver ICs[J]. Journal of Semiconductors, 2008, In Press. Li H S, Sun W F, Yi Y B, Shi L X. Modeling of High-Voltage LDMOS for PDP Driver ICs[J]. J. Semicond., 2008, 29(11): 2110.Export: BibTex EndNote |
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| Authors: | Li Haisong Sun Weifeng Yi Yangbo Shi Longxing |
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| Affiliation: | National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China;National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China;National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China;National ASIC System Engineering Research Center,Southeast University,Nanjing 210096,China |
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| Abstract: | A SPICE sub-circuit model is developed for high-voltage LDMOS transistors integrated in PDP driver ICs.The model accounts for intrinsic LDMOS phenomena such as the quasi-saturation effects,voltage-dependent drift resistance,seIf-heating effects,and Miller capacitance.In contrast to most physical or sub-circuit models,the proposed model not only Provides precise simulated results,but also brings a very fast modeling procedure.Furthermore,the model also can be embedded in a commercial SPICE simulator easily.The simulation results using the presented models agree well with the measured ones and the error is less than 5%. |
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| Keywords: | model LDMOS sub-circuit PDP driver ICs |
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