Energy spectrum of electron trapping centers in CuInAsS3 |
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| Authors: | E. M. Zobov A. Yu. Mollaev L. A. Saipulaeva A. G. Alibekov N. V. Melnikova |
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| Affiliation: | 1.Amirkhanov Institute of Physics,Dagestan Scientific Centre of the Russian Academy of Sciences,Makhachkala, Republic of Dagestan,Russia;2.Institute of Natural Science,Ural Federal University,Yekaterinburg,Russia |
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| Abstract: | This paper presents the results of the investigation of the energy spectrum of electronic states due to trapping centers, the role of which in CuInAsS3 is played by lattice defects. The results of the analysis of the thermally stimulated current curves of CuInAsS3 demonstrate that the energy spectrum of trapping centers is localized under the bottom of the conduction band in the energy range E C–(0.14–0.35) eV. |
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