用于光致抗蚀剂的聚对羟基苯乙烯的合成及其进展

随着集成电路芯片的发展,生产物理和化学性质均一的高分子光阻剂得到了各信息产业国的重视.到目前为止,含对羟基苯乙烯基的高分子光阻剂已成为光刻蚀0.11μm线宽芯片的关键技术.本文综述了目前合成窄分布的含对羟基苯乙烯基的高分子光阻剂的各种方法,在此基础上比较了各种合成方法的优缺点,为合成窄分布的含对羟基苯乙烯基的高分子光阻剂提供了必要的指导.

Progress in the Synthesis of Poly(4-Hydroxystyrene) for Polymer Photoresists

With the development of the integrate circuit chip technology, more and more attentions have been paid to the synthesis of polymer photoresists with homogeneous chemical and physical features, for the reason that the fabricating polymer photoresists based on poly (4-hydroxystyrene) became one of the key technologies for making the O.llμm chip. In this paper, the methods of synthesizing nan-ow dispersing polymer photoresists based on poly (4-hydroxystyrene) was reviewed and compared with each other, in order to provide a useful guide for the synthesizing polymer photoresists based on poly (4-hydroxystyrene).