Diode-pumped passively Q-switched Nd:YVO_4 laser with GaAs saturable absorber |
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作者姓名: | 李桂秋 赵圣之 杨克建 赵宏明 |
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作者单位: | School of Information Science and Engineering,Shandong University,Ji'nan 250100,School of Information Science and Engineering,Shandong University,Ji'nan 250100,School of Information Science and Engineering,Shandong University,Ji'nan 250100,School of Information Science and Engineering,Shandong University,Ji'nan 250100 |
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基金项目: | This work was supported by the Science and Technol- ogy Development Program of Shandong Province (No. 013060102). |
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摘 要: | The intracavity photon density is assumed to be of Gaussian spatial distributions and its longitudinal variation is also considered in the rate equations for a laser diode (LD) end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber. These space-dependent rate equations are solved numerically. The dependences of pulse width, pulse repetition rate, single-pulse energy, and peak power on incident pump power are obtained. In the experiment, the LD end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber is realized and the experimental results are consistent with the numerical solutions.
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