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Electrical peculiarities in Al/Si/Ge/…/Ge/Si and Al/SiGe/Si structures |
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| Authors: | Zs J Horvth K Jarrendhl M dm I Szab Vo Van Tuyen Zs Czigny |
| Institution: | a Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O. Box 49, Budapest 114 H-1525, Hungary b Department of Physics, Linköping University, 581 83 Linköping, Sweden |
| Abstract: | The current–voltage (I–V) and capacitance–voltage (C–V) behaviour of different Si/Ge multilayers and SiGe single layers prepared on p-type Si substrates by magnetron sputtering and annealing, has been studied in the temperature range of 80–320 K by using Al Schottky contacts as test structures. Although a significant influence of the microstructure of the Si/Ge multilayers and SiGe layers was obtained on the electrical behaviour of the structures, the structures exhibited similar specific features. |
| Keywords: | Si SiGe Schottky barrier Superlattice Amorphous Electrical behaviour |
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