Single-photon detection mechanism in a quantum dot transistor |
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Authors: | NS Beattie BE Kardyna AJ Shields I Farrer DA Ritchie M Pepper |
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Institution: | aToshiba Research Europe Ltd., 260 Cambridge Science Park, Milton Road, Cambridge CB4 0WE, UK;bCavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, UK |
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Abstract: | We study the transport mechanisms in a quantum dot MODFET by tuning the localization induced by charge stored on the quantum dots with light. The temperature dependence of the resistivity of a macroscopic sample reveals a hopping transport when the dots contain an excess of electrons. The resistance of a mesoscopic sample however, which is capable of detecting single photons, exhibits a much weaker dependence upon temperature. This points towards source-drain tunnelling as a transport mechanism and is confirmed by a statistical analysis of the single-photon-induced conductance steps. The complexity of the conducting paths increases as the average hopping length reduces. |
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Keywords: | Quantum dots Hopping Localization |
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