Electrical transport and high pressure studies on bulk Ge20Te80 glass |
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| Authors: | G Parthasarathy A K Bandyopadhyay S Asokan E S R Gopal |
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| Affiliation: | (1) Department of Physics, Indian Institute of Science, 560 012 Bangalore, India;(2) Present address: National Physical Laboratory, Hillside Road, 110012 New Delhi, India |
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| Abstract: | The electrical resistivity of bulk Ge20Te80 has been measured as a function of pressure and temperature. At 5 GPa, an amorphous semiconductor-to-crystalline metal transition has been observed. The sample recovered from the high pressure cell, after the application of 7 GPa, has a face-centred cubic structure with a lattice constant of 6·42 A. In crystalline sample, the semiconductor-to-metal transition occurs at 7 GPa. The thermoelectric power has also been measured for glassy samples in the temperature range 300–240 K. |
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| Keywords: | High pressure effects on solids chalcogenide glass semiconductor-to-metal transition pressure-induced crystallization |
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