气态源分子束外延生长扩展波长InGaAs探测器性能分析

从理论与实验两方面对截止波长为1.7μm(x=0.53),1.9μm(x=0.6)和2.2μm(x=0.7)p in InxGa1-xAs探测器性能进行了研究.对探测器暗电流的研究结果表明,扩展波长In0.6Ga0.4As,In0.7Ga0.3As探测器在反向偏置低压区,欧姆电流占据主导地位;在反向偏置高压区,缺陷隧穿电流占主导地位;且扩展波长In0.6Ga0.4As,In0.7Ga0.3As探测器的暗电流比In0.53Ga0.47As探测器增加较大.对探测器R0A随温度及i层载流子浓度变化关系的研究结果表明,在热电制冷温度下探测器性能可得到较大提高,i层的轻掺杂可使探测器的R0A得到改善.

InGaAs PHOTOVOLTAIC DETECTORS GROWN WITH GAS SOURCE MBE

The performance of pin InxGa1-xAs photovoltaic detectors with cutoff wavelengths of 1.7μm (x=0.53), 1.9μm (x=0.6) and 2.2μm (x=0.7) was investigated theoretically and experimentally. The analyses of dark current show that due to the ohmic conduction leakage current at lower reverse bias and trap assisted tunneling current at higher reverse bias, the dark currents of extended wavelength In0.6Ga0.4As and In0.7Ga0.3As detectors are considerable larger than that of In0.53Ga0.47As detectors. The analyses of the dependence of R0A product on temperature and the carrier concentration of light absorption layer show that InxGa1-xAs detectors can exhibit excellent performance at thermoelectric cooling temperatures and R0A can benefit from the slightly higher doping in the light absorption layer.