| Si（100）（2×1）表面光学二次谐波强度随温度的变化关系 |
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| 引用本文： | 蒋红兵,刘杨华,陆兴泽,王文澄,郑家骠.Si（100）（2×1）表面光学二次谐波强度随温度的变化关系[J].光学学报,1995,15(6):648-652. |
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| 作者姓名： | 蒋红兵 刘杨华 陆兴泽 王文澄 郑家骠 |
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| 作者单位： | 三束材料改性国家重点实验室复旦大学分部，复旦大学物理系 |
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| 摘 要： | 通过测量基频光波长为１．０６４μｍ时几个不同掺杂类型和掺杂浓度的Ｓｉ（１００）（２×１）样品表面反射二次谐波强度随温度的变化关系，说明在此波长上二次谐波不是来源于表面耗尽场的影响，而是来源于表面态电子。Ｓｉ（１００）（２×１）表面反射二次谐波强度反比于温度的平方。本文提出了一个简单模型，给出了初步解释。
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| 关 键 词： | 光学二次谐波产生，Si（100）（2×1）表面，表面态 |
| 收稿时间： | 1994/3/6 |
Temperature Dependence of Second Harmonic Generation from Si (100) (2×1) Surfaces |
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| Jiang Hongbing, Liu Yanghua, Lu Xingze,Wang Wencheng, Zheng Jiabiao.Temperature Dependence of Second Harmonic Generation from Si (100) (2×1) Surfaces[J].Acta Optica Sinica,1995,15(6):648-652. |
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| Authors: | Jiang Hongbing Liu Yanghua Lu Xingze Wang Wencheng Zheng Jiabiao |
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| Abstract: | By measuring the temperature dependences of second harmonic intensity from several (2×1 ) reconstructed St (100) samples with different doping materials and doping concentrations at the foundmental wavelength of 1064 um, we have revealed that the reflected second harmonic signals at this fundamental wavelength is induced by electrons in surface states, not by surface depletion electric field. The intensity of reflected SH signals was inversely proportional to the square of the sample temperature. |
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| Keywords: | optical second harmonic generation Si (100) (2×1) surface surface state |
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