| 漂移区阶梯掺杂的双栅SOI LDMOS研究 |
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| 引用本文： | 罗小蓉,张伟,顾晶晶,廖红,张波,李肇基.漂移区阶梯掺杂的双栅SOI LDMOS研究[J].半导体学报,2009,30(8):084006-4. |
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| 作者姓名： | 罗小蓉 张伟 顾晶晶 廖红 张波 李肇基 |
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| 作者单位： | State;Laboratory;Electronic;Thin;Films;Integrated;Devices;University;Science;Technology;China;ASIC;System;Fudan; |
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| 摘 要： | A new double gate SOI LDMOS with a step doping profile in the drift region is proposed. The structure is characterized by one surface gate and another embedded gate under the P-body region. The broadened current flow path and the majority carrier accumulation layer on the side wall of the embedded gate reduce the specific on-resistance （Ron, sp）. The electric field distribution is improved due to the embedded gate and step doping profile, resulting in a high breakdown voltage （BV） and low Ron, sp. The influences of device parameters on BV and Ron, sp are investigated by simulation. The results indicate that BV is increased by 35.2% and Ron, sp is decreased by 35.1% compared to a conventional SOI LDMOS.
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| 关 键 词： | LDMOS 兴奋剂 绝缘硅 漂移区 配置 双门 电场分布 BV公司 |
A new double gate SOI LDMOS with a step doping profile in the drift region |
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| Luo Xiaorong,Zhang Wei,Gu Jingjing,Liao Hong,Zhang Bo and Li Zhaoji.A new double gate SOI LDMOS with a step doping profile in the drift region[J].Chinese Journal of Semiconductors,2009,30(8):084006-4. |
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| Authors: | Luo Xiaorong Zhang Wei Gu Jingjing Liao Hong Zhang Bo and Li Zhaoji |
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| Institution: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of ASIC & System, Fudan University, Shanghai 200433, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | A new double gate SOI LDMOS with a step doping profile in the drift region is proposed. The structure is characterized by one surface gate and another embedded gate under the P-body region. The broadened current flow path and the majority carrier accumula |
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| Keywords: | SOI embedded gate electric field breakdown voltage specific on-resistance |
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