| Abstract: | The effect of low-frequency (LF) noise sources located in various regions of the transistor on drain current in the static regime is calculated. A method for experimental evaluation of the spectral intensities of the major noise sources is proposed. Calculations are compared to experiment. The model describes the noise behavior of the MOSFET satisfactorily.Leningrad Polytechnic Institute. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 34, No. 2, pp. 198–204, February, 1991. |
