Electrodeposition of ZnO nanorods for device application |
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Authors: | B Postels A Bakin H-H Wehmann M Suleiman T Weimann P Hinze A Waag |
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Institution: | (1) Institute of Semiconductor Technology, Technical University of Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig, Germany;(2) Physikalische Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany |
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Abstract: | We report the electrochemical growth of zinc oxide nanorods in a zinc nitrate/hexamethylenetetramine solution at 70 °C. High-density
vertical nanorods were grown on Au films on silicon substrates with a texture coefficient better than 99.9%. By varying the
reactant concentration the diameter can be varied between 100 and 250 nm, with corresponding lengths of 1 to 4 μm. Furthermore,
this approach was used for the selective growth on Ti/Au strip conductors ordered in an interdigitated structure on an insulating
substrate. We achieved the growth of ZnO nanorods between neighbouring strip conductors bridging the gap between them. In
this configuration the nanorods are already contacted and electrical measurements can be directly performed. First I–V measurements
show a good conductivity of the as-grown nanorods and the resistance could be estimated to be 0.1 Ω cm. Under UV illumination
the ZnO nanorods demonstrate a photoconductivity, but only after annealing the sample at 300 °C in N2.
PACS 61.05.cp; 73.63.-b; 78.55.Et; 81.15.Pq; 82.45.Yz |
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