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Si,Ge,Zr和Sn掺杂SrTiO3的电子结构和光催化性能第一性原理研究
引用本文:熊明姚,孔维静,胡斌,杨淑敏. Si,Ge,Zr和Sn掺杂SrTiO3的电子结构和光催化性能第一性原理研究[J]. 原子与分子物理学报, 2024, 41(4): 046006-185
作者姓名:熊明姚  孔维静  胡斌  杨淑敏
作者单位:喀什大学物理与电气工程学院
基金项目:新疆维吾尔自治区自然科学基金面上项目(2020D01A08);
摘    要:使用QUANTUM ESPRESSO(QE)软件包实现的密度泛函理论研究了Si, Ge, Zr和Sn掺杂SrTiO3的结构,电子结构和光催化性能.使用广义梯度近似(GGA)获得SrTiO3的晶格常数与先前的实验数据非常一致.同时,获得了SrTi0.875X0.125O3(X=Si, Ge, Zr, Sn)四种掺杂体系的晶格常数. SrTiO3和SrTi0.875X0.125O3(X=Si, Ge, Zr, Sn)四种掺杂的带隙值分别1.853 eV、1.849 eV、1.916 eV、1.895 eV和1.925 eV.在研究五种SrTiO3体系的光催化性能时,采用剪刀算符对五种SrTiO3体系的带隙值进行修正.计算本征SrTiO3和SrTi0.875X0.125O3

关 键 词:掺杂  SrTiO3  电子结构  光催化性能
收稿时间:2022-10-23
修稿时间:2022-11-07

First principles study on electronic structure and photocatalytic performance of Si, Ge, Zr and Sn doped SrTiO3
Xiong Ming-Yao,Kong Wei-Jing,Hu Bin and Yang Shu-Min. First principles study on electronic structure and photocatalytic performance of Si, Ge, Zr and Sn doped SrTiO3[J]. Journal of Atomic and Molecular Physics, 2024, 41(4): 046006-185
Authors:Xiong Ming-Yao  Kong Wei-Jing  Hu Bin  Yang Shu-Min
Affiliation:School of Physics & Electrical Engineering, Kashi University, Kashi 844000, Xinjiang, China,School of Physics & Electrical Engineering, Kashi University, Kashi 844000, Xinjiang, China,School of Physics & Electrical Engineering, Kashi University, Kashi 844000, Xinjiang, China and School of Physics & Electrical Engineering, Kashi University, Kashi 844000, Xinjiang, China
Abstract:In this paper, electronic structure and photocatalytic performance of Si, Ge, Zr and Sn doped SrTiO3 were studied using density functional theory realized by QUANTUM ESPRESSO (QE) software package. The lattice constants of SrTiO3 obtained by using the generalized gradient approximation (GGA) are very consistent with the previous experimental data. At the same time, the lattice constants of SrTi0.875X0.125O3 (X=Si, Ge, Zr, Sn) doped systems were obtained. The band gap values of SrTiO3 and SrTi0.875X0.125O3 (X=Si, Ge, Zr, Sn) are 1.827 eV, 1.778 eV, 1.878 eV, 1.917 eV and 1.936 eV, respectively. The band gaps of the five systems increase with the increase of molecular weight. When studying the photocatalytic performance of five SrTiO3 systems, the band gap values of the five SrTiO3 systems were modified by using the scissors operator. The reduction potential (ECB) of the conduction band edge of the four intrinsic SrTiO3 and SrTi0.875X0.125O3 (X=Si, Ge, Zr, Sn) doping systems were calculated to be -0.782 eV, -0.714 eV, -0.770 eV, -0.824 eV and -0.810 eV, respectively. The oxidation potential (EVB) of the valence band edge corresponding to five SrTiO3 systems was calculated as 2.418 eV, 2.437 eV, 2.481 eV, 2.466 eV and 2.499 eV, respectively. From the perspective of redox properties, the redox properties of the three SrTi0.875X0.125O3 (X=Ge, Zr, Sn) doping systems are improved compared with the intrinsic SrTiO3, and the redox properties of SrTi0.875X0.125O3 are reduced compared with the intrinsic SrTiO3. The relative positions of the band edges of the five SrTiO3 systems can meet the process of water splitting to generate H2 and O2.
Keywords:Doping   SrTiO3   Electronic structure   Photocatalytic performance   QUANTUM ESPRESSO
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