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簇离子Mo_3S_4M~(n+)中M与Mo成键作用及电子光谱(M=Fe、Ni,n=4;M=Cu,n=5)
引用本文:程文旦,郭国聪,黄锦顺,张乾二. 簇离子Mo_3S_4M~(n+)中M与Mo成键作用及电子光谱(M=Fe、Ni,n=4;M=Cu,n=5)[J]. 结构化学, 1994, 0(3)
作者姓名:程文旦  郭国聪  黄锦顺  张乾二
作者单位:中国科学院福建物质结构研究所
基金项目:国家自然科学基金,结构化学国家重点实验室基金,福建省自然科学基金
摘    要:应用INDO/S半经验量子化学方法,对簇合物离子Mo3S和Mo3S4Mn+(M=Fe、Ni,n=4;M=Cu,n=5)分别进行分子轨道计算。根据计算得到的簇离子中的原子表观电荷和成键指标,说明Fe、Ni、Cu+与Mo3S成键作用的相对强度依次是Fe-Mo>Ni-Mo>Cu+-Mo。比较了用含组态作用的INDO/S方法计算得到的电子跃迁能与实验得到的电子吸收光谱值,并讨论了吸收峰归属情况。对于M为Fe、Ni的簇离子Mo3S4M4+,最低能量的电子跃迁吸收峰起源于异金属间电荷转移跃迁(MM’CT);而Mo3S4Cu(5+)簇离子观察到的吸收峰主要是Mo3S芯的局域内电荷转移跃迁。根据理论计算结果,由Cu+离子到Mo3S的电荷转移跃迁谱线,大约在46000cm-1以上才能观察到吸收峰。从Mo3S4Fe4+次低能量吸收峰的实验值16600cm-1和理论值16500cm-1与Mo3S的最低能量吸收峰的实验值16600cm-1和理论值16900cm-1比较,表明无论从理论上或实验上都能证实簇离子Mo3S4Fe4+在能量为16600cm-1处的吸收峰是起因于Mo3S芯的局域内电荷转移跃迁。

关 键 词:簇合物Mo_3S_4M~(n+),化学键,电子光谱

Bonding Strength between M and Mo_3S_4 ̄(4+)and Electronic Absorption Spectra for Cluster Ions Mo_3S_4M ̄(n+)(M=Fe、Ni,n=4;M=Cu,n=5)
Cheng Weng-Dan,Guo Guo-Cong,Huang Jin-Shun,Zhang Qian-Er. Bonding Strength between M and Mo_3S_4 ̄(4+)and Electronic Absorption Spectra for Cluster Ions Mo_3S_4M ̄(n+)(M=Fe、Ni,n=4;M=Cu,n=5)[J]. Chinese Journal of Structural Chemistry, 1994, 0(3)
Authors:Cheng Weng-Dan  Guo Guo-Cong  Huang Jin-Shun  Zhang Qian-Er
Abstract:By the INDO/S SCF-MO method,the atomic formal charges and bonding indices of the cluster ions Mo3S(4+) and Mo3S4M(n+)(M=Fe,Ni,n=4;M=Cu,n=5) are calculated and used to explain the strengths of the bonding interaction.The interactions between the M-Mo decreace in the other Fe-Mo>Ni-Mo>Cu+-Mo.Especially,the electronic excited energies and oscillator strengths of the cluster ions Mo3S4M(n+) have been calculated by INDO-SCI method.Comparing them with the observed absorption bands,an agreement between the calculated results and observed ones is found.The observed absorption bands are mostly assigned as electronic transfers from the Fe,Ni to the core Mo3S44 for the cluster ions Mo3S4M(4+)(M=Fe,Ni) and as transitions within the local core Mo3S4(4+) for Mo3S4Cu5.
Keywords:bonding strength  electronic spectrum  cluster Mo_3S_4M ̄(n+)
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