Spin-dependent tunneling in junctions containing metals with charge density waves in a magnetic field |
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Authors: | A. I. Voĭtenko A. M. Gabovich |
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Affiliation: | (1) Institute of Physics, National Academy of Sciences of Ukraine, pr. Nauki 46, Kiev, 03028, Ukraine |
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Abstract: | The dependences of the differential tunneling conductance G on the voltage V across a junction in an external magnetic field H are calculated for two types of junctions involving normal or superconducting metals with charge density waves (CDWs). Junctions of the first type are asymmetric CDW metal (CDWM)-insulator-ferromagnet junctions. The results of calculations for these junctions demonstrate that there occurs splitting between the components of the conductance G(V) corresponding to the tunneling of electrons with spins aligned with the magnetic field H and opposite to it, as is the case with junctions containing a superconducting electrode instead of the CDWM electrode. Junctions of the second type are junctions between two normal or superconducting CDWM electrodes. For junctions with at least one normal CDWM electrode and H ≠ 0, the conductance G(V) also exhibits spin splitting. The form of the conductance G(V) for tunnel junctions of both types depends on the phase of the order parameter of the charge density waves. |
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