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Quantized Hall effect in disordered GaAs layers with 3D spectrum in tilted magnetic fields |
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| Authors: | S S Murzin I Claus A G M Jansen |
| Institution: | 1. Grenoble High Magnetic Field Laboratory, Max-Planck-Institut für Festk?rperforschung and Centre National de la Recherche Scientifique, B.P.166, F-38042, Grenoble Cedex 9, France 2. Institute of Solid State Physics, Russian Academy of Sciences, 142432, Chernogolovka, Moscow Region, Russia 3. Grenoble High Magnetic Field Laboratory, Max-Planck-Institut für Festk?rperforschung and Centre National de la Recherche Scientifique, B.P.166, F-38042, Grenoble Cedex 9, France |
| Abstract: | The quantum Hall effect structure in the transverse magnetoresistance R xx and the Hall resistance R xy of heavily doped GaAs layers with a three-dimensional spectrum of the charge carriers is investigated for different field orientations. The characteristic structures (minima in R xx and plateaus in R xy ) shift much more slowly to higher fields and are suppressed much more rapidly in comparison with the expected angular dependence for a two-dimensional system. The results are discussed in terms of the anisotropic change of the three-dimensional conductivity tensor with magnetic field rotation. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 4, 305–308 (25 August 1998) |
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