Impurity scattering effect in Pd-doped superconductor SrPt3P |
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| Authors: | Kang-Kang Hu Bo Gao Qiu-Cheng Ji Yong-Hui Ma Hui Zhang Gang Mu Fu-Qiang Huang Chuan-Bing Cai Xiao-Ming Xie |
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| Affiliation: | 1.Shanghai Key Laboratory of High Temperature Superconductors,Shanghai University,Shanghai,China;2.State Key Laboratory of Functional Materials for Informatics and Shanghai Center for Superconductivity, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai,China;3.School of Physical Science and Technology,ShanghaiTech University,Shanghai,China;4.CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai,China |
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| Abstract: | We present a systematic study of the impurity scattering effect induced by Pd dopants in the superconductor SrPt3P. Using a solid-state reaction method, we fabricated the Pd-doped superconductor Sr(Pt1?x Pd x )3P.We found that the residual resistivity ρ 0 increases quickly with Pd doping, whereas the residual resistance ratio (RRR) displays a dramatic reduction. In addition, both the nonlinear field-dependent behavior of the Hall resistivity ρ xy and the strong temperature dependence of the Hall coefficient R H at low temperature are suppressed by Pd doping. All the experimental results can be explained by an increase in scattering by impurities induced by doping. Our results suggest that the Pt position is very crucial to the carrier conduction in the present system. |
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