分子筛组装单质半导体碲的拉曼光谱

无机介孔材料MCM41是高有序,直孔道介孔分子筛,具有孔径约4nm的一维均匀孔道,孔壁厚约1nm,介孔体积可达40%,是一种很理想的组装材料主体。半导体碲位于第Ⅵ族,其六方相的晶格排列呈螺旋链状结构。本文采用固相合成反应方法,将单质半导体碲成功地组装在MCM41介孔分子筛中。在组装体中,单质半导体碲保持着六方相的晶体结构,其拉曼晶体振动表现出纳米晶体的结构特征。真空热处理实验表明,组装体具有良好的热稳定性。Te的六方相和所具有的独特的螺旋链状结构使Te分子很容易进入MCM41的直孔道内,同时MCM41均匀而规则的直孔道限制了Te螺旋链的随机排列,因而被组装在直孔道内的Te能螺旋链式生长,形成一维半导体纳米晶体,排列均匀,尺寸单一,具有稳定的空间构型

Raman Study of Tellurium Crystals Loaded in MCM-41

Semiconductor tellurium (Te) has been loaded successfully in molecular sieve MCM 41 by diffusing method. MCM 41 consists of an ordered array of silica tubules comprising pores with uniform and controllable diameter in the nanometer range. XRD, infrared spectra and Raman scattering were studied to the heterostructures Te/MCM 41. The results showed that the loaded tellurium is liable to crystallize in the channel of the sieve. Modes soften from the bulk phase Te crystal were also observed in Raman spectra. It is reliable that the Raman scattering obtained results from Te quantum line. Semiconductor tellurium (Te) has been loaded successfully in molecular sieve MCM 41 by diffusing method. MCM 41 consists of an ordered array of silica tubules comprising pores with uniform and controllable diameter in the nanometer range. XRD, infrared spectra and Raman scattering were studied to the heterostructures Te/MCM 41. The results showed that the loaded tellurium is liable to crystallize in the channel of the sieve. Modes soften from the bulk phase Te crystal were also observed in Raman spectra. It is reliable that the Raman scattering obtained results from Te quantum line.