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Selective area epitaxy of GaN for electron field emission devices |
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| Authors: | D. Kapolnek R. D. Underwood B. P. Keller S. Keller S. P. Denbaars U. K. Mishra |
| Affiliation: | a Materials Department, University of California, Santa Barbara, California 93106, USA b Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA |
| Abstract: | Selective area epitaxy of GaN by MOCVD has been used to fabricate arrays of hexagonal pyramid structures for electron field emission devices. The reactor temperature and pressure have been found to strongly affect the resulting pyramid morphology. Growth at 76 Torr results in improved pyramid shape and uniformity compared to growth at atmospheric pressure. Optimized arrays of pyramids produced emission currents of 80 μA at 1100 V, when biased across 0.5 mm in UHV. |
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