Electron leakage effects on GaN-based light-emitting diodes |
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Authors: | Joachim Piprek and Simon Li |
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Institution: | 1.NUSOD Institute LLC,Newark,USA;2.Crosslight Software Inc.,Burnaby,Canada |
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Abstract: | Nitride-based light-emitting diodes suffer from a reduction (droop) of the internal quantum efficiency (IQE) with increasing
injection current. Using advanced device simulation, we investigate the impact of electron leakage on the IQE droop for different
properties of the electron blocker layer (EBL). The simulations show a strong influence of the EBL acceptor density on the
droop. We also find that the electron leakage decreases with increasing temperature, which contradicts common assumptions. |
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