Thermal change of organic light-emitting ALQ3 thin films |
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| Authors: | Mei-Han Wang Takayuki Konya Masahiro Yahata Yutaka Sawada Akira Kishi Takayuki Uchida Hao Lei Yoichi Hoshi Li-Xian Sun |
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| Institution: | (1) Center for Hyper Media Research, Tokyo Polytechnic University, 1583 Iiyama, Atsugi Kanagawa, 243-0297, Japan;(2) Rigaku Corporation, 3-9-12 Matsubara, Akishima Tokyo, 196-8666, Japan;(3) Materials and Thermochemistry Laboratory, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China;(4) Department of Industrial Chemistry, Graduate School of Engineering, Tokyo Polytechnic University, 1583 Iiyama, Atsugi Kanagawa, 243-0297, Japan; |
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| Abstract: | A series of Alq3 thin films with the thicknesses of 50, 100, and 200 nm was deposited on Si substrates at room temperature
using the thermal evaporation method. The thermal crystallization process of Alq3 thin films, especially 50 nm thick films,
was successfully examined using high-temperature X-ray diffraction (HT-XRD) with the in-plane scan mode. Film thickness, density,
and changes in surface roughness while heating were determined using X-ray reflectometry (XRR). The decreased density and
increased surface roughness, which were accompanied by sublimation, indicate the instability of the Alq3 film. Thus, thermal
instability is a major factor for device failure. |
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