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Spin splitting in HgTe/CdHgTe (013) quantum well heterostructures
Authors:K E Spirin  A V Ikonnikov  A A Lastovkin  V I Gavrilenko  S A Dvoretskii and N N Mikhailov
Institution:1.Institute for Physics of Microstructures,Russian Academy of Sciences, GSP-105,Nizhni Novgorod,Russia;2.Institute of Semiconductor Physics, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia
Abstract:The electron transport and cyclotron resonance in a one-sided selectively doped HgTe/CdHgTe (013) heterostructure with a 15-nm quantum well with an inverted band structure have been investigated. The modulation of the Shubnikov-de Haas oscillations has been observed, and the spin splitting in zero magnetic field has been found to be about 30 meV. A large Δm c/m c ≃ 0.12 splitting of the cyclotron resonance line has been discovered and shown to be due to both the spin splitting and the strong nonparabolicity of the dispersion relation in the conduction band.
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