| 10 kV高重频开关组件设计 |
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| 引用本文： | 石小燕,任先文,丁恩燕,杨周炳,梁勤金.10 kV高重频开关组件设计[J].太赫兹科学与电子信息学报,2019,17(2):343-347. |
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| 作者姓名： | 石小燕 任先文 丁恩燕 杨周炳 梁勤金 |
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| 作者单位： | Science and Technology on High Power Microwave Laboratory，Institute of Applied Electronics，China Academy of Engineering Physics，Mianyang Sichuan 621999，China,Science and Technology on High Power Microwave Laboratory，Institute of Applied Electronics，China Academy of Engineering Physics，Mianyang Sichuan 621999，China,Science and Technology on High Power Microwave Laboratory，Institute of Applied Electronics，China Academy of Engineering Physics，Mianyang Sichuan 621999，China,Science and Technology on High Power Microwave Laboratory，Institute of Applied Electronics，China Academy of Engineering Physics，Mianyang Sichuan 621999，China and Science and Technology on High Power Microwave Laboratory，Institute of Applied Electronics，China Academy of Engineering Physics，Mianyang Sichuan 621999，China |
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| 基金项目： | 国家重点研发计划资助项目(2017YFF0104300) |
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| 摘 要： | 设计了一种基于功率金属氧化物半导体场效应晶体管(MOSFET)的高压开关组件。通过串联20只1 kV的RF MOSFET单元电路，获得耐压10 kV以上的高速、高重复频率的开关组件。开展了高压开关组件的结构设计和1 kV的RF MOSFET单元电路设计及散热设计。利用开关组件进行了10 kV脉冲源实验装置设计，测试结果发现脉冲前沿较仿真结果变缓。
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| 关 键 词： | 高压开关组件 高重复频率 高速 串联电路 散热设计 |
| 收稿时间： | 2017/11/14 0:00:00 |
| 修稿时间： | 2018/1/27 0:00:00 |
Design of high repeat frequency switch module with 10 kV |
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| SHI Xiaoyan,REN Xianwen,DING Enyan,YANG Zhoubing and LIANG Qinjin.Design of high repeat frequency switch module with 10 kV[J].Journal of Terahertz Science and Electronic Information Technology,2019,17(2):343-347. |
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| Authors: | SHI Xiaoyan REN Xianwen DING Enyan YANG Zhoubing and LIANG Qinjin |
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| Abstract: | A design of high voltage switch module based on a stack of Metal Oxide Semiconductor Field-Effect Transistor(MOSFET) is put forward. By stacking 20 RF MOSFETs with Uds of 1 kV, the switch module shows high speed and high repeat frequency, and can operate above 10 kV. The structure of high voltage switch module, a unit circuit using one RF MOSFET switch and a method of cooling the switch are designed. A pulse generator circuit based on the high voltage switch module is simulated. A 10 kV pulse generator is created by the stack. The turn-on time of pulse generated by experimental device is lower than simulated result. |
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