飞秒时间分辨的能谱分析光电子显微镜：异质结超快载流子动力学测量

本文成功搭建了一套集成了能谱分析功能的时间分辨光电子显微镜系统(TR-PEEM),能够对电子密度分布进行时间分辨和能量分辨的成像.这套4D显微镜在空间、时间、能量多维度获取电子动力学信息提供了前所未有的手段.本文使用184 fs的时间分辨、150 meV的能量分辨和优于150 nm的空间分辨对半导体进行了测量,在Si(111)表面的Pb岛上获得了微区光电子能谱和能量分辨的TR-PEEM图像.实验结果表明,这套系统是进行异质结载流子动力学观察的有力工具,有助于在亚微米/纳米空间尺度和超快时间尺度上加深对半导体性质的理解.

Femtosecond Time-Resolved Spectroscopic Photoemission Electron Microscopy for Probing Ultrafast Carrier Dynamics in Heterojunctions

The fast developing semiconductor industry is pushing to shrink and speed up transistors. This trend requires us to understand carrier dynamics in semiconductor heterojunctions with both high spatial and temporal resolutions. Recently, we have successfully set up a timeresolved photoemission electron microscopy (TR-PEEM), which integrates the spectroscopic technique to measure electron densities at specific energy levels in space. This instrument provides us an unprecedented access to the evolution of electrons in terms of spatial location, time resolution, and energy, representing a new type of 4D spectro-microscopy. Here in this work, we present measurements of semiconductor performance with a time resolution of 184 fs, electron kinetic energy resolution of 150 meV, and spatial resolution of about 150 nm or better. We obtained time-resolved micro-area photoelectron spectra and energy-resolved TR-PEEM images on the Pb island on Si(111). These experimental results suggest that this instrument has the potential to be a powerful tool for investigating the carrier dynamics in various heterojunctions, which will deepen our understanding of semiconductor properties in the submicron/nanometer spatial scales and ultrafast time scales.