| MBE-grown Ridge-waveguide InGaAs/InGaAsP Strained Quantum Well Lasers at 2 μm Wavelength |
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| 作者单位： | BAI Jingsong,FANG Zujie,ZHANG Yunmei,CHEN Gaoting(Shanghai Institute of Optics and Fine Mechanics, The Chinese Academy of Sciences Shanghai 201800, China);LI Aizhen,CHEN Jianxin(State Key Laboratory of Functional Materials of Informatics, Shanghai Institute of Metallurgy, The Chinese Academy of Sciences, Shanghai 200050, China)
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| 摘 要： | The result of molecular beam epitaxy (MBE)-grown ridge-waveguide InGaAs/ InGaAsP/InP strained quantum well lasers at 2 μm wavelength is reported. The pulsed electrical luminescence spectrum at room temperature is observed with peak wavelength of about 1.98 μm. At 77 K the lasers become lasing in pulse regime, with threshold current of about 18～30 mA, peak wavelength of about 1.87～ 1. 91 μm, and single longitudinal mode operation in the current range of 160～230 mA.
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