Synthesis,Characterization, and Non‐Volatile Memory Device Application of an N‐Substituted Heteroacene |
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| Authors: | Chengyuan Wang Jiangxin Wang Dr. Pei‐Zhou Li Dr. Junkuo Gao Si Yu Tan Dr. Wei‐Wei Xiong Dr. Benlin Hu Prof. Pooi See Lee Prof. Yanli Zhao Prof. Qichun Zhang |
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| Affiliation: | 1. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore), Fax: (+65) 67909081;2. School of Physical and Mathematical Sciences, Nanyang Technological University, 637371 (Singapore) |
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| Abstract: | N‐substituted heteroacenes have been widely used as electroactive layers in organic electronic devices, and only a few of them have been investigated in organic resistive memory devices. Here, a novel N‐substituted heteroacene 2‐(4′‐(diphenylamino)phenyl)‐4,11‐bis((triisopropylsilyl)ethynyl)‐1H‐imidazo[4,5‐b]phenazine ( DBIP ) has been designed, synthesized, and characterized. Sandwich‐structure memory devices based on DBIP have been fabricated and the devices show non‐volatile and stable memory character with good endurance performance. |
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| Keywords: | heteroacenes nitrogen heterocycles non‐volatile memory device organic electronics |
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