Dissociation of PtSi,NiSi and PdGe in presence of Pt,Ni and Pd films,respectively |
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Authors: | G Ottaviani G Majni C Canali |
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Institution: | (1) Istituto di Fisica, Università di Modena, Via Camp 1 213/A, I-41 100 Modena, Italy |
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Abstract: | 4He+ ions backscattering spectrometry and x-ray diffractometry were used to study interactions between PtSi and Pt, NiSi and Ni,
PdGe and Pd. Due to the dissociation of the compound the formation of a phase richer in metal was observed to grow at the
original compound/metal interface in the temperature range considered, 280–325°C for Pt2Si, 325°C for Ni2Si and 180–260°C for Pd2Ge. The growth kinetics of these new phases (Pt2Si and Pd2Ge) follow a parabolic relation between thickness and annealing time. At a given temperature the growth rate of Pt2Si and Pd2Ge in compound-metal structure is a factor
higher than in the usual semiconductor-metal structure.
Partially supported by Consiglio nazionale delle Ricerche (Italy) and by Commission of the European Communities. |
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Keywords: | 81 10 Jt 81 30Bx |
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