| V型槽衬底内条形大光腔可见光半导体激光器 |
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| 引用本文： | 陈国鹰,王新桥.V型槽衬底内条形大光腔可见光半导体激光器[J].光谱学与光谱分析,1996,16(5):18-21. |
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| 作者姓名： | 陈国鹰 王新桥 |
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| 作者单位： | [1]河北工业大学24信箱 [2]新墨西哥大学 |
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| 摘 要： | 采用一种新的液相外延工艺，研制出具有大光腔结构的Ｖ型槽衬底内条形可见光发射半导体激光器，其光谱波长为７７９－７８４ｎｍ，室温连续工作阈值电流为６０ｍＡ，具有２倍阈值的基模工作时，线性输出光功率可达８ｍＷ，４ｍＷ下工作寿命已超过３０００小时。
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| 关 键 词： | V型 槽衬底 内条形 大光腔 半导体激光器 |
V-CHANNELED SUBSTRATE INNER STRIPE VISIBLE SEMICONDUCTOR LASER WITH A LARGE OPTICAL CAVITY |
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| CHEN Guoying, LIU Wenjie.V-CHANNELED SUBSTRATE INNER STRIPE VISIBLE SEMICONDUCTOR LASER WITH A LARGE OPTICAL CAVITY[J].Spectroscopy and Spectral Analysis,1996,16(5):18-21. |
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| Authors: | CHEN Guoying LIU Wenjie |
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| Abstract: | Using a new kind of liquid-phase epitaxy technology, V-channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated. Its wavelength ranges from 779 to 784um, threshold current is 60mA at room temperature with CW Operation. The linear laser output power operated at the fundamental mode with two fold threshold values is 18mW. The CW operation time at 4mW is longer than 3000 hours. |
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| Keywords: | V-channeled substrate Inner stripe Large optical cavity Semiconductor laser |
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