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Moir patterns and step edges on few-layer graphene grown on nickel films
作者姓名:柯芬  尹秀丽  佟鼐  林陈昉  刘楠  赵汝光  付磊  刘忠范  胡宗海
作者单位:State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University;Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences,State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering,Academy for Advanced Interdisciplinary Studies, Peking University;Collaborative Innovation Center for Quantum Matter
摘    要:Few-layer graphene grown on Ni thin films has been studied by scanning tunneling microscopy. In most areas on the surfaces, moir′e patterns resulted from rotational stacking faults were observed. At a bias lower than 200 mV, only one sublattice shows up in regions without moir′e patterns while both sublattices are seen in regions with moir′e pattens. This phenomenon can be used to identify AB stacked regions. The scattering characteristics at various types of step edges are different from those of monolayer graphene edges, either armchair or zigzag.

关 键 词:zigzag  stacking  monolayer  tunneling  nickel  Moir  crystallinity  rotational  showing  explained
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