Fractional Josephson vortices: oscillating macroscopic spins |
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Authors: | T Gaber K Buckenmaier D Koelle R Kleiner E Goldobin |
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Institution: | 1.Institut für Experimentalphysik,Universit?t Hamburg,Hamburg,Germany |
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Abstract: | Photon-induced band bending changes and subsequent relaxation at the buried insulator/semiconductor interface of BaF2/Si(001) have been investigated. This is achieved by creating free charge carriers through absorption of a visible pump laser
pulse (λ=532 nm, E=2.33 eV) in the silicon, followed by time resolved photoelectron spectroscopy using vacuum-ultraviolet
synchrotron radiation (E=18 eV) as a probe of the BaF2 valence band (VB). Since the excitation takes place in the semiconductor and the probe photoemission signal originates from
the BaF2, the relaxation at the interface has been probed.
PACS 41.60.Ap; 33.60.Cv; 79.60.Jv; 73.40.Qv |
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