Electron- and Hole-Doping Effects in Manganites Studied by X-Ray Absorption Spectroscopy |
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| Authors: | K. Asokan J. C. Jan K. V. R. Rao J. W. Chiou H. M. Tsai W. F. Pong M.-H. Tsai Ravi Kumar |
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| Affiliation: | (1) Department of Physics, Tamkang University, Tamsui, 251, Taiwan;(2) Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan;(3) Present address: Nuclear Science Centre, Aruna Asaf Ali Marg, New Delhi, 110 067, India;(4) Present address: Department of Physics, University of Rajasthan, Jaipur, India |
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| Abstract: | We investigate the electronic structures of hole-doped, La0.7Ca0.3MnO3, and electron-doped, La0.7Ce0.3MnO3, manganites by x-ray absorption near edge structure (XANES) spectroscopy at the O and Mn K-edges. While, the O K-edge XANES results indicate that Ca and Ce doping induce holes in O 2p derived states, the Mn K-edge XANES do not give any evidence for creation of the Mn4+ (or Mn2+) ions by Ca (or Ce) dopants. Such results further questions the validity of double exchange mechanism in understanding the anomalous properties of manganites. |
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| Keywords: | electron-doping electronic structures hole-doping manganites XANES |
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