Computer simulation of pulsed laser processing of amorphous Si

The paper introduces a 3D computer simulation model of the melting and recrystallization process of amorphous Si induced by pulsed laser irradiation. The model takes into account the temperature dependence of thermal and optical properties of crystalline, amorphous and liquid Si. The melting process is described by introducing for each volume element of melt pool the characteristic times of beginning of melting, end of melting and nucleation of a stable nucleus. The solution of heat equations of liquid and solid phases also provides one with the nucleation rates and temperatures. These data enable one to discriminate whether amorphous or crystalline phases are really allowed to be formed. Two examples of computer simulation are carried out to show the outputs of the model. Received: 7 February 2000 / Accepted: 28 March 2000 / Published online: 9 August 2000