Three-dimensional structuring of sapphire by sequential He+ ion-beam implantation and wet chemical etching |
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Authors: | Crunteanu A. Jänchen G. Hoffmann P. Pollnau M. Buchal C. Petraru A. Eason R.W. Shepherd D.P. |
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Affiliation: | (1) Applied Photonics Laboratory, Institute for Biomedical Imaging, Optics, and Engineering, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland, CH;(2) Institut für Schichten und Grenzfl?chen, ISG-IT, Forschungszentrum Jülich, 52425 Jülich, Germany, DE;(3) Optoelectronics Research Centre, University of Southampton, Highfield, Southampton SO17 1BJ, United Kingdom, UK |
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Abstract: | We present a method for the selective two- and three-dimensional patterning of sapphire using light ion-beam implantation to generate severe lattice damage to depths exceeding 1 μm and subsequent selective wet chemical etching of the damaged regions by hot H3PO4. C-cut sapphire crystals were implanted through contact masks using ion fluences of 1×1016 to 5×1017 He+/cm2 and energies up to 400 keV. The etching process is characterized by a high selectivity and a rate of approximately 19 nm/min. Whereas an implantation that produces a continuously damaged pathway results in complete etching from the surface, sole in-depth implantation using only high-energy ions leads to under-etching of the crystalline surface layer. By a combination of these processes we have fabricated three-dimensional structures such as channels and bridges in sapphire. Received: 14 October 2002 / Accepted: 15 October 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax +41-21/693-3701, E-mail: aurelian.crunteanustanescu@epfl.ch |
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Keywords: | PACS: 81.65.Cf 79.20.Rf 41.75.Ak |
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