Enhancement of Raman scattering intensity in porous silicon |
| |
| Authors: | M. E. Kompan I. I. Novak V. B. Kulik N. A. Kamakova |
| |
| Affiliation: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;(2) St. Petersburg State University, St. Petersburg, Russia |
| |
| Abstract: | An enhancement in inelastic light scattering intensity from porous-silicon quantum wires has been discovered. It is shown that this effect is caused by a decrease in the absorption coefficient of the optical medium formed by quasi-one-dimensional structures, with the crystal structure of the wires themselves remaining unchanged. Fiz. Tverd. Tela (St. Petersburg) 41, 1320–1322 (July 1999) |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
