Enhancement of Raman scattering intensity in porous silicon |
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Authors: | M. E. Kompan I. I. Novak V. B. Kulik N. A. Kamakova |
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Affiliation: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;(2) St. Petersburg State University, St. Petersburg, Russia |
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Abstract: | An enhancement in inelastic light scattering intensity from porous-silicon quantum wires has been discovered. It is shown that this effect is caused by a decrease in the absorption coefficient of the optical medium formed by quasi-one-dimensional structures, with the crystal structure of the wires themselves remaining unchanged. Fiz. Tverd. Tela (St. Petersburg) 41, 1320–1322 (July 1999) |
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